首页> 美国政府科技报告 >Development of the Field-Induced Electron Injection and Impact Ionization (F4I) Technique for Radiation Hardness Testing of MOS (Metal-Oxide-Semiconductor) Gate Insulators
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Development of the Field-Induced Electron Injection and Impact Ionization (F4I) Technique for Radiation Hardness Testing of MOS (Metal-Oxide-Semiconductor) Gate Insulators

机译:用于mOs(金属氧化物半导体)栅极绝缘子的辐射硬度测试的场致电子注入和碰撞电离(F4I)技术的开发

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摘要

Results are presented of an effort to develop an all-electrical means for simulating the effects of ionizing radiation on the radiation-sensitive oxide layers of metal-oxide-semiconductor (MOS) microelectronic devices. The report describes the field-induced electron injection and impact ionization (F4l) technique, its successful demonstration, and successful correlation of F4l test results with conventional radiation hardness tests using an ionizing radiation source (60Co). Also described are the development and operation of a microcomputer-controlled test system that permits semiautomatic application of the F4l test to circuit test structures.

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