Hot electron injection metal-oxide-semiconductor transistor for use in memory cell of flash-type microelectromechanical memory in e.g. smart card, has floating gate comprising two parts that are connected by intermediate part

摘要

The transistor (T4) has a semiconductor substrate (1) provided with source and drain areas (2, 3), and a floating gate (FG3) arranged between a control gate (CG3) and the substrate. The gate comprises two parts (p1, p2) arranged on sides of the source and drain areas at two distances (D1, D2) from the substrate, respectively. One of the distances is smaller than the other distance, where values of the distances range from 13 to 21 and from 8 to 10 nm, respectively. An intermediate part (p3) connects the parts. A dielectric layer (20) extends between the substrate and one of the parts. An independent claim is also included for a method for programming a metal-oxide-semiconductor (MOS) transistor.