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All-Implanted Planar-Buried-Heterostructure Graded-Index Separate-Confinement-Heterostructure Laser in GaAs/AlGaAs

机译：Gaas / alGaas中全注入平面埋置异质结构渐变折射率分离 - 限制 - 异质结构激光

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We report operation of an all-implanted planar-buried heterostructure graded-index separate-confinement-heterostructure laser in GaAs/AlGaAs. The structure utilizes only Si and Be ion-implantation and rapid thermal annealing to form both the reverse blocking junctions and the buried-heterostructure waveguide. 1 ref., 2 figs. (ERA citation 14:022800)

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Vawter, G. A. ; Myers, D. R. ; Brennan, T. M. ; Hammons, B. E.;
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年度 1988
页码 1-10
总页数 10
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Solid State Lasers; Design; Gallium Arsenides; Ion Implantation; Operation; Waveguides;

机译：固态激光器;设计;砷化镓;离子注入;操作;波导;

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专利

1. Implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure laser in GaAs/AlGaAs [J] . Vawter G.A., Myers D.R. IEEE Photonics Technology Letters . 1989,第7期

机译：GaAs / AlGaAs中植入平面埋藏异质结构，梯度指数，单独约束异质结构激光器
2. Characterization of parabolic light-hole effects on an implanted-planar-buried-heterostructure graded-index separate-confinement-heterostructure InGaAs-AlGaAs strained-layer laser [J] . Vawter G.A., Myers D.R. IEEE Transactions on Electron Devices . 1989,第11期

机译：抛物面光孔效应对InGaAs-AlGaAs应变层激光器的植入平面埋入异质结构渐变折射率分离约束异质结构的影响
3. Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers [J] . Yamamoto N., Yokoyama K. Electronics Letters . 1994,第3期

机译：极低阈值梯度折射率分离约束异质结构应变InGaAsP单量子阱激光器
4. Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers [C] . Offsey, S.D., Schaff, . 1989

机译：GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离约束异质结构单量子阱激光器的光学和微波性能
5. Integration of a GaAs/AlGaAs SQW laser and a tapered waveguide coupler. [D] . Xie, Suning. 1996

机译：GaAs / AlGaAs SQW激光器和锥形波导耦合器的集成。
6. Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers [O] . Giuseppe Tandoi, Charles N. Ironside, John H. Marsh, -1

机译：输出电源限制和被动模式锁定GaAs / Algaas量子阱激光器的改进
7. Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs [O] . Yang GW, Xu ZT, Xu JY, 1998

机译：使用新型InGaAsP和AlGaAs混合材料系统生长和制备高性能980nm应变InGaAs量子阱激光器
8. Low threshold current Implanted-Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure GaAs-AlGaAs laser. [R] . Vawter, G. A., Myers, D. R., Brennan, T. M., 1990

机译：低阈值电流注入 - 平面 - 埋层 - 异质结构，渐变折射率，分离 - 限制 - 异质结构Gaas-alGaas激光器。

All-Implanted Planar-Buried-Heterostructure Graded-Index Separate-Confinement-Heterostructure Laser in GaAs/AlGaAs

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