Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers

摘要

A low threshold current density of approximately 100 A/cm/sup 2/ has been obtained at 1.55 mu m using a graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser. The design of the laser structure is based on results calculated from the viewpoint of effective carrier injection into the well.