Radiation effects in InAsSb strained-layer superlattice photodiodes induced by dose-rate and transient x-ray environments.

摘要

A side-by-side measurement was made of the gamma-flux noise in an InAsSb strained-layer superlattice (SLS) photodiode and a comparable HgCdTe photodiode. Correcting for minor differences in detector quantum efficiency and area, we found that the SLS can operate in a gamma-flux (ge) 10x that limiting HgCdTe detector performance. Transient photoresponse measurements on an InAsSb SLS detector were performed using a pulsed x-ray source. A detector recovery time of 150 nsec was observed, and modeling of the transient response predicted a minority carrier lifetime of 350 nsec and a diffusion length of 2 (mu)m. 10 refs., 4 figs.