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Strain release in GaAs/Ga(1-x)/InxAs strained layer superlattices grown on (112) substrates.

机译：在（112）衬底上生长的Gaas / Ga（1-x）/ Inxas应变层超晶格中的应变释放。

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GaAs/Ga(sub 1-x)In(sub x)As strained layer superlattices with well-widths of 7nm, barrier widths of 14nm and periods of 10 to 30 have been examined by TEM for (112) substrates. Individual layers are below the critical thickness while the overall SLS is ab ...

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作者
T. E. Mitchell O. Unal;
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年度 1991
页码 1-10
总页数 10
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Ceramics; Coherency strain; Crystal Growth; EDB/360602; Electron microscopy; Gallium Arsenides; Indium arsenides; Meetings; Molecular Beam Epitaxy; Strains; Substrates; Superlattices; Transmission Electron Microscopy;

机译：陶瓷;相干应变;晶体生长; EDB / 360602;电子显微镜;砷化镓;砷化铟;会议;分子束外延;应变;基板;超晶格;透射电子显微镜;

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1. Strained layer In/sub x/Ga/sub 1-x/As/GaAs and In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/P multiple-quantum-well optical modulators grown by gas-source MBE [J] . Kim J.W., Chen C.W. IEEE Photonics Technology Letters . 1993,第9期

机译：应变层In / sub x / Ga / sub 1-x / As / GaAs和In / sub x / Ga / sub 1-x / As / In / sub y / Ga / sub 1-y / P多量子阱气源MBE生长的光学调制器
2. Structural and optical propertiels of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layer [J] . R.C. Tu, Y.K. Su, Y.S. Huang Journal of Crystal Growth . 1999,第MAY期

机译：使用ZnSe / ZnTe应变层超晶格缓冲层在GaAs上生长的高质量ZnTe的结构和光学性质
3. Structural and optical properties of In_xGa_(1-x)As strained layers grown on GaAs substrates by MOVPE [J] . M.M. Habchi, N. Tounsi, M. Bedoui, Physica, E. Low-dimensional systems & nanostructures . 2014,第Null期

机译：通过MOVPE在GaAs衬底上生长的In_xGa_（1-x）As应变层的结构和光学性质
4. Strain release in GaAs/Ga_(1-x)In_xAs strained layer superlattices grown on (112) substrates [C] . Conference on the microscopy of semiconducting materials . 1991

机译：GaAs / GA_（1-x）中的应变释放IN_XAS应变层超晶格（112）基板生长
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs [O] . Yuri G. Sadofyev, Nigamananda Samal 2010

机译：MBE在GaAs上生长的应变GaAsSb / GaAs QW结构的光致发光和能带排列
7. Structural and optical characterization of alternately strained GaAs/GaP/GaAs/InP superlattices grown by atomic layer molecular beam epitaxy [O] . Mazuelas Esteban Ángel José, Meléndez Sánchez Juan, Domínguez P. S., 2012

机译：原子层分子束外延生长的交替应变GaAs / GaP / GaAs / InP超晶格的结构和光学表征
8. Optical Characterization of GaAs(1-x)Sb(x) and GaAs(1-x)Sb(x)/GaAs Strained Layer Superlattices [R] . Klem, J. F. , Huang, D. , Morkoc, H. , 1987

机译：Gaas（1-x）sb（x）和Gaas（1-x）sb（x）/ Gaas应变层超晶格的光学表征

Strain release in GaAs/Ga(1-x)/InxAs strained layer superlattices grown on (112) substrates.

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