Optical Characterization of GaAs(1-x)Sb(x) and GaAs(1-x)Sb(x)/GaAs Strained Layer Superlattices

摘要

Molecular beam epitaxy has been used to grow both GaAs (0.5)Sb(0.5) films lattice-matched to InP and GaAs(1-x)Sb(x)/GaAs strained layer superlattices on GaAs substrates. Films grown on InP substrates are of a composition inside the well-known solid-phase miscibility gap for this alloy. Because these films are metastable, they exhibit an unusual microstructure which includes both ordering and clustering effects. Nevertheless, we have obtained low-temperature photoluminescence linewidths of under 8 MeV. This represents the best linewidth for this material reported to data. Correlations between film microstructure and the optical quality of these alloys have been observed. (ERA citation 13:011928)