A Novel Pseudomorphic (GaAs_(1-x)Sb_x-In_yGa_(1-y)As)/GaAs Bilayer-Quantum-Well Structure Lattice-Matched to GaAs for Long-Wavelength Optoelectronics

摘要

Two types of quantum well (QW) structures grown lattice matched on (100) GaAs have been studied. The first type of structure consists of pseudomorphic GaAs_xSb_(1-x)/GaAs (x ≤ 0.3) SQWs which show emission wavelengths longer than those reported for pseudomorphic In_yGa_(1-y)As/GaAs QWs. However, the attractive emission wavelength of 1.3 μm has not been achieved. To reach this goal, a novel type of bilayer QW (BQW) has been grown consisting of a stack of two adjacent pseudomorphic layers of GaAs_xSb_(1-x) and In Ga_(1-y)As embedded between GaAs confinement layers. In this BQW, a type-Ⅱ heterojunction is formed between GaAs_xSb_(1-x) and InyGa_(1-y)As, resulting in a spatially indirect radiative recombination of electrons and holes at emission wavelengths longer than those achieved in the GaAs_xSb_(1-x)GaAs and In_yGa_(1-y)As/GaAs SQWs. The longest 300K emission wavelength observed so far was 1.332 μm.