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Strain-Induced Polarization Effects for III-V Heterostructure Device Applications

机译：应变诱导的III-V异质结构器件应用的偏振效应

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摘要

The effects of externally applied uniaxial stresses on 111-V double barrierresonant tunneling devices was studied experimentally and theoretically. Devices

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作者
Ruden, P. P.; Nathan, M. I.;
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年度 1996
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总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Polarization; Piezoelectric materials; Stresses; Electric fields; Substrates; Strain(Mechanics); Axes; Heterogeneity; Polarizing filters;

机译：极化;压电材料;应力;电场;基板;应变（力学）;轴;异质性;偏振滤光片;

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2. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices [J] . O. Ambacher, R. Dimitrov, M. Stutzmann, Physica status solidi, B. Basic research . 1999,第1期

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3. Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: Towards monolithic integration of nano-devices [J] . Kanungo P.D., Schmid H., Bj?rk M.T., Nanotechnology . 2013,第22期

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4. Micro-Hall devices: a tool for investigating process dependent noise sources in planar III-V heterostructure devices [C] . Vincent Mosser, Alexandre Kerlain Annual International Conference on Compound Semiconductor MANufacturing TECHnology . 2005

机译：微厅器件：一种用于调查平面III-V异质结构装置的过程依赖噪声源的工具
5. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices. [D] . Chen, Eugene I-Chun. 1996

机译：含铝III-V半导体的选择性氧化：量子阱异质结构激光器和晶体管器件的特性和应用。
6. Strain-Induced Metastable Topological Networks inLaser-Fabricated TaS2 Polytype Heterostructures for NanoscaleDevices [O] . Jan Ravnik, Igor Vaskivskyi, Yaroslav Gerasimenko, -1

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7. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices [O] . Chen Eugene I-Chun 1996

机译：含铝III-V半导体的选择性氧化：量子阱异质结构激光器和晶体管器件的特性和应用

Strain-Induced Polarization Effects for III-V Heterostructure Device Applications

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