III-V DIFFUSION TOLERANT III-V SEMICONDUCTOR HETEROSTRUCTURES AND DEVICES INCLUDING THE SAME

摘要

Channel semiconductor devices comprising a sub-fin comprising a first III-V compound semiconductor and a second III-V compound semiconductor are described. In some embodiments, the semiconductor devices include a substrate comprising a trench defined by at least two trench sidewalls, wherein the first group III-V compound semiconductor is deposited in the trenches on the substrate, and the second group III-V The compound semiconductor is epitaxially grown on the first III-V group compound semiconductor. In some embodiments, the conduction band offset between the first group III-V compound semiconductor and the second group III-V compound semiconductor is greater than about 0.3 electron volts. Methods of fabricating such semiconductor devices and computing devices containing such semiconductor devices are also described.;