Defect formation and dopant diffusion in III-V semiconductors: zinc diffusion in GaP

摘要

Using zinc diffusion as a model case, the generation and role of extended defects formed in GaP single crystals during dopant diffusion at elevated temperatures have been investigated extensively by methods of analytical transmission electron microscopy of cross-section specimens. The temporal evolution of the defect structure and the anomalous shape; of the zinc concentration profiles are dependent upon the chosen diffusior parameters. A comparison with results for GaSb and GaAs indicates that types, formation processes and many aspects of the temporal evolution of the diffusion-induced defects represent general phenomena for III-V Semiconductors under high-concentration dopant diffusion. [References: 16]