Fabricating method for semiconductor component e.g. solar cell, involves forming diffusion-inhibiting layer, partial removal of layer in highly doped region, formation of dopant source and diffusion of dopant from dopant source

摘要

The method involves forming a layer (58), which inhibits diffusion of a dopant. The dopant is penetrated into the layer on a portion of the surface of a semiconductor component material (50). A diffusion-inhibiting layer in a highly doped region (62) is partially removed. The dopant source (66) is formed on the diffusion-inhibiting layer in the highly doped region and the dopant is diffused from the dopant source into the semiconductor component material. The dopant is made up of phosphorus or boron.