Use of high-level doping amorphous formation as a semiconductor device and the dopant diffusion source to in SiC which were formed with introduction manner and this manner to in SiC of the impurity dopant

摘要

(57) Abstract The semiconductor formation of SiC to (2) in low temperature semiconductor formation the process a which the ion injects the dopant) the ion implantation process a which consists of) in order doping amorphous surface approach formation to make form (6), it executes dopant introduction manner, to (2), process a) it executes the annealing process of semiconductor formation at the high temperature where the dopant diffuses in the non injection substratum of the semiconductor formation which follows to surface approach formation afterwards.