A METHOD FOR INTRODUCTION OF AN IMPURITY DOPANT IN SiC, A SEMICONDUCTOR DEVICE FORMED BY THE METHOD AND A USE OF A HIGHLY DOPED AMORPHOUS LAYER AS A SOURCE FOR DOPANT DIFFUSION INTO SiC

摘要

The present invention demonstrates thin flexible protected screened flat cable portion (3) for connection of an intraoral X-ray sensor (2) to its external electronic controller. According to the present invention, a flexible screened multi-wire flat cable portion (3) is produced, which can be passed through a very narrow gap between the teeth of the upper and lower jaws for producing "bitewing" images, as well as periapical images with or without the use of a bite-block, by means of the intraoral X-ray CCD sensor. The flexible screened flat multi-wire cable (3) permits sharp bending in different angles relative to the sensor capsule (1) with a very short bending radius and having an expected lifetime of several tens of thousands bendings with a small bending radius.