Analysis of Quantum Effects in Non-Uniformly Doped MOS Structures

摘要

This paper presents results from the self-consistent solution of Schrodinger andPoisson equations obtained in one-dimensional non-uniformly doped MOS structures suitable for the fabrication of very short transistors. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultra-short MOSFETs.