首页>
外国专利>
Magnetoresistive sensor having a quantum well structure and a P-doped trapping layer to prevent surface charge carriers from migrating to the quantum well structure
Magnetoresistive sensor having a quantum well structure and a P-doped trapping layer to prevent surface charge carriers from migrating to the quantum well structure
展开▼
机译:具有量子阱结构和P掺杂陷阱层的磁阻传感器,可防止表面电荷载流子迁移到量子阱结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.
展开▼