Methods to calibrate the levels of doping for at least two layers of delta doping incluu00ecdas in a semiconductor structure in multilayer and to generate a semiconductor multilayer structure in semiconductor structures, and, in multi-layer and multiple quantum well

摘要

Methods to calibrate the levels of doping for at least two layers of delta doping incluu00ecdas in a semiconductor structure in multilayer and to generate a semiconductor multilayer structure in semiconductor structures, and, in multi-layer and multiple quantum well.In a calibration method, the relationship between concentrations of dopant layers of doping sym in a semiconductor structure in multilayer and process parameters is determined in S1, based on specimens collected in volume of material in which the multiple layers of doping sym is Located.A concentration of the desired dopant is selected in S2, and the structure of semiconductor device with predetermined levels of doping can be generated in S3 based on the relationship between the process parameters and the concentrations of predetermined doping.