Diluted-Magenetic Semiconductor (DMS) Tunneling Devices for the Terahertz Regime.

摘要

Report developed under STTR contract W911NF-08-C-0084. This program involves the design, fabrication and testing of resonant tunneling diodes with DMS layers for operation at room temperature and above. We have demonstrated, through numerical simulation that by varying the magnetic field a significant amount of frequency tuning of a DMS resonant tunneling diode, can be attained. Devices fabricated with clear, sharp interfaces with Cr doped AlN barriers displayed evidence of RTD NDC but appeared to be affected strongly by the presence of traps. Significant progress was made in developing variable mesh algorithms that should improve the simulation capabilities necessary for the design and development of nano-scale high-barrier structures common to wide band gap III-V semiconductors.