Growth and Fabrication of GaN-Based Heterojunction Bipolar Transistors

摘要

GaN HBTs are promising for microwave power applications but face numerous technology barriers. In this project, we are addressing the enhancement of the hole concentration in p-type GaN by piezoelectric effects and/or the use of superlattices. We are currently assessing the activity of Mg-doped GaN on sapphire and lithium gallate as grown by MBE. In addition, we are modeling these effects to optimize the hole concentration in realistic HBT structures.