Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growth

摘要

Reports the first demonstration of a lateral heterojunction bipolar transistor realised using selective area epitaxy to grow the emitter and collector structures. The transistor had a gain of 2 at a current density of 2 kA cm/sup -2/. The low current gain is directly attributable to the base width used in this novel structure and does not result from the regrown junctions which exhibited an ideality factor of 1.6.