Three-Dimensional Ferroelectric Integrated Circuits -- Prototype Fabrication and Interface Studies

摘要

For Stoichiometry and Deposition Temperature Dependence of the Microstructural and Electrical Properties of Barium Strontium Titanate Thin Films, the Group II/Ti ratio should be as close as possible, but should not exceed the stoichiometric value of 1.00 and the grain size should be as large as possible in order to optimize the electrical properties of BST thin films deposited using LS-MOCVD. For the Effect of Deposition Temperature, the Group II/Ti ratio should be as close to 1.00 as possible. The effects of grain size and volume fraction on the amorphous phase are of secondary importance when the stoichiometry ratio is close to 1.00. The Group II/Ti ratio plays a far greater role in controlling the electrical properties of BST films than the deposition temperature, grain size, or amorphous phase volume fraction. For Microstructural and Electrical Characterization of Barium Strontium Titanate Thin Films, a microstructure consisting of cubic BST plus a second amorphous phase is characteristic of BST thin films and not the deposition process used for their synthesis. When the Group II/Ti ratio is close to one, the grain size is not related to the electrical properties of the thin films.