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Chip support substrate, chip support method, three-dimensional integrated circuit, assembly device, and fabrication method of three-dimensional integrated circuit

机译:芯片支撑基板,芯片支撑方法,三维集成电路,组装装置以及三维集成电路的制造方法

摘要

The present invention relates to a chip support substrate including a lyophilic region 4 that is formed on the substrate and that absorbs a chip 3A, and an electrode 6 that is formed on the substrate and in the lyophilic region and that generates electrostatic force in the chip, and to a chip support method including the steps of arranging the chip onto the lyophilic region of the chip support substrate with a liquid 15, the chip support substrate comprising the lyophilic region that is formed on the substrate, and the electrode that is formed on the substrate and in the lyophilic region, and generating the electrostatic force in the chip corresponding to the electrode by applying a voltage to the electrode.
机译:芯片支撑基板技术领域本发明涉及一种芯片支撑基板,其包括形成在基板上并吸收芯片 3 A的亲液区域 4 和电极 6 < / B>形成在基板上并在亲液区域中并在芯片中产生静电力,并且涉及一种芯片支撑方法,该方法包括以下步骤:用液体 15 ,该芯片支撑衬底包括:形成在衬底上的亲液区域;以及形成在衬底上和亲液区域中的电极,并通过以下方式在对应于电极的芯片中产生静电力:向电极施加电压。

著录项

  • 公开/公告号US9449948B2

    专利类型

  • 公开/公告日2016-09-20

    原文格式PDF

  • 申请/专利权人 TOHOKU UNIVERSITY;

    申请/专利号US201314427232

  • 申请日2013-09-13

  • 分类号H01L21/02;H01L25/065;H01L23/32;H01L21/52;H01L23/498;H01L23/544;H01L23;H01L21/56;H01L21/683;H01L25;B23K20;B23K20/02;B23K20/16;H01L23/31;H01L23/14;H01L23/50;H01L21/768;

  • 国家 US

  • 入库时间 2022-08-21 14:31:28

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