Monolithic Integration of Optoelectronic Devices and Si-CMOS on Gallium Arsenide

摘要

During the course of this two-year program, the first silicon-on- gallium arsenide, SonG, wafers were successfully produced. These Si-on-GaAs (SonG) wafers were shown to be able to withstand temperature cycles to in excess of 700 deg C, and thus to be suitable for CMOS fabrication using a reduced- temperature SQI process and for epitaxy-on-electronics (EoE) integration of optoelectronic devices using molecular beam epitaxy. GaAs-based quantum-well heterostructures with high photoluminescent efficiency and narrow emission line shape were grown by molecular beam epitaxy in windows cut through to the gallium arsenide substrate on SonG wafers, demonstrating the feasibility of doing EoE processing on this foundation. Substantial progress was made before the end of the program in developing techniques to planarize processed CMOS wafers sufficiently for wafer bonding, but the results were not sufficiently developed that reliable bonding of CMOS on GaAs could be demonstrated. This work is continuing with other funding.