Range distribution and electronic stopping power for Cobalt (Co) ions in Gallium Arsenide (GaAs) optoelectronic devices

摘要

Studies for introduction of atoms into a solid substrate by bombardment of the solid with ions in the electron-volt (eV) to mega-electron-volt (MeV) energy range have always received great interest. Gallium Arsenide (GaAs) is a basic material for most of the III-V based electronics, and, therefore, lends itself for applications where this is of concern. In this paper, the damage evolution due to photon energy deposition of Cobalt (Co) is being simulated in GaAs material using SRIM (Stopping and Range of Ions in Matter). Besides, TRIM (The Range of Ions in Matter) calculation also gives the amount of nuclear energy deposited in the collisions and recoil events. From the findings of this research, it is found that exposure to high energy photon irradiation causes a degradation of the electrical parameters of GaAs layer and this is mainly caused by the displacement damage.