Study of Terahertz Radiation from Narrow Bandgap Semiconductors: InAs and InSb.

摘要

We investigated THz radiation from narrow bandgap semiconductors: n- type, p-type InSb and InAs were investigated using a time-resolved THz detection system. As a reference, THz radiation from InP (a wide bandgap semiconductor) was also measured. From the polarity of the waveforms we concluded that the ultrafast build-up of a photo-Dember field is the main emission mechanism for both InAs and InSb.