GaInAsN/InP Lasers With Low Linewidth Enhancement Factor

摘要

This contract has resulted in three major research: accomplishments: (1) epitaxial growth of GaAsN and InGaAsN with excellent optical properties, (2) detailed understanding of kinetics of the nitrogen incorporation in (In)GaAsN, and (3) growth of high quality GaN, AlN and AlGaN, over the entire range of compositions, by gas source molecular beam epitaxy. These three areas are discussed in the report.