Synthesis and Characterization of Rare Earth Doped Wide Bandgap Materials

摘要

It has been found that codopant impurities (O, C, F) can enhance the luminescence and efficiency of Si:Er, but only when introduced in the proper Er/Impurity ratio. While it has been shown that addition of elements such as C and O can enhance the IR emission from GaN:Er, there has as yet been no systematic investigation of the role of the concentration of these codopants in the luminescence and surface properties of the GaN films. In this work, the effect of C codoping introduced via CBr4 on the structural and optical properties of GaN:Er films grown on sapphire by gas source molecular beam epitaxy (GSMBE) has been investigated in an attempt to address these issues. The effect of post- growth annealing on PL intensity in the carbon-doped material has also been explored. Finally, Eu-doping of GaN has been investigated for potential use in red emitting devices.