High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/ Without Al(0.2)Ga(0.8)As Blocking Layers.

摘要

InAs/AlGaAs quantum dot infrared photodetectors based on bound-to- bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers. At 77 K and 4.7 V bias the responsivity was 14 mA/W and the detectivity, D(*), was 10(exp 10) cm Hz (sup 1/2)/W.