High-performance InAs/GaAs quantum dots infrared photodetector with/without Al{sub}0.2Ga{sub}0.8As blocking layers

摘要

InAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and -0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 10{sup}10 cmHz{sup}(1/2)/W.