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Plasmonic-Layered InAs/InGaAs Quantum-Dots-in-a-Well Pixel Detector for Spectral-Shaping and Photocurrent Enhancement

机译：等离子体层叠InAs / InGaAS量子点 - 孔阱像素检测器用于光谱 - 整形和光电流增强

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期刊名称 Nanomaterials
作者
Jehwan Hwang; Zahyun Ku; Jiyeon Jeon; Yeongho Kim; Jun Oh Kim; Deok-Kee Kim; Augustine Urbas; Eun Kyu Kim; Sang Jun Lee;
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作者单位

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年(卷),期 2020(10),9
年度 2020
页码 1827
总页数 14
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
关键词
spectral imaging; plasmonic resonance; metal hole array; quantum dots-in-a-well; electromagnetic simulation;

机译：光谱成像;等离子体共振;金属孔阵列;量子点井;电磁仿真;

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专利

1. Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening [J] . Golovynskyi Sergii, Datsenko Oleksandr I, Seravalli Luca, Nanotechnology . 2019,第30期

机译：INAS / Ingaas Quantum Dot阵列内平面光电流的缺陷影响：长期电子捕获和库仑筛选
2. Local photocurrent mapping of InAs/InGaAs/GaPts intermediate-band solar cells using scanning near-field optical microscopy [J] . Rouis W., Haggui M., Rekaya S., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2016,第Null期

机译：使用扫描近场光学显微镜对InAs / InGaAs / GaPts中带太阳能电池进行局部光电流测绘
3. Interband dot-to-well transitions in InAs/InGaAs dots in a well probed via photocurrent and electroluminescence spectroscopy [J] . M. Defensor, V. Magusara, E. Estacio, Applied Physicsletters . 2008,第20期

机译：通过光电流和电致发光光谱探测的井中InAs / InGaAs点中的带间点到阱过渡
4. Time-resolved mid-infrared dynamics of an InAs/InGaAs quantum-dots-in-a-well detector [C] . R. P. Prasankumar, R. D. Averitt, A. J. Taylor, International Quantum Electronics Conference . 2004

机译：InAs / InGaAs量子点的时间分辨中红外动态 - 井阱探测器
5. III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications [D] . Huang, Cheng-Ying. 2015

机译：适用于低待机功率逻辑应用的III-V超薄InGaAs / InAs MOSFET
6. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

机译：变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
7. Plasmonic-Layered InAs/InGaAs Quantum-Dots-in-a-Well Pixel Detector for Spectral-Shaping and Photocurrent Enhancement [O] . Jehwan Hwang, Zahyun Ku, Jiyeon Jeon, 2020

机译：等离子体层叠InAs / InGaAS量子点 - 孔阱像素检测器，用于光谱 - 整形和光电流增强

Plasmonic-Layered InAs/InGaAs Quantum-Dots-in-a-Well Pixel Detector for Spectral-Shaping and Photocurrent Enhancement

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