Construction of a Reactive Co-Evaporation Oxide Thin Film Deposition System

摘要

The goal of this research program is to develop a Molecular Beam Epitaxy (MBE) system adapted to the growth and characterization of complex oxide films. The research focus is on the epitaxial growth of complex oxides, such as SrTiO3 and BaTiO3, on single crystal silicon and complex oxide substrates. This task leads to a number of requirements for this system: 10000 C substrate temperature to remove SiO2 from Si wafers in situ; angstrom per minute deposition rates to accurately synthesize unit cell buffer layers; high- resolution reflection, high-energy electron diffraction (RHEED) to characterize surface structure; and an oil-free pumping system to avoid contamination. (1 figure).