III-Nitride Metalorganic Chemical Vapor Deposition System for Development of High Power Electronics.

摘要

This award provided funding to purchase a new metal organic chemical vapor deposition (MOCVD) system for growth of GaN-based materials and devices. By combining the money provided by the DURIP award with donations from industry and matching funds from the University of Florida, an epitaxial facility worth $1 M has been constructed. This facility will be used to provide device structures for fabrication of high power GaN-based HEMTs and MOSFETs. This facility will benefit multiple DOD programs including two currently funded by the electronics programs at the U.S. Office of Naval Research (Development Of GaN MOSFETS And MISFETS, US Navy NOOOl4-98-l-0204, Dr. Harry Dietrich) and the U. S. Air Force Office of Scientific Research (Development Of Passivation Technology For Improved GaN/AlGaN HEMT Performance And Reliability, U. S. Air Force F4962O-O2-l-0366, Dr. Gerald Witt). These contracts are aimed at developing improved dielectrics for high power GaN devices and to date have produced significant advances in the quality and effectiveness of dielectric/GaN interfaces. Because of this award, we can now capitalize on the successful oxide development generated by these programs. This equipment will provide a controlled in-house supply of GaN/AlGaN device material in order to identify much more precisely the role of a variety of material parameters as well as device layer structure in the performance of devices containing oxide/nitride interfaces. Acquisition of this system will also enable new avenues of investigation including resistance to thermal, electrical and radiation degradation for both all-nitride and nitride/oxide devices. Finally, acquisition of this MOCVD system will now allow development of a well controlled in-house device technology of the type needed to fabricate more advanced structures and prototypes including ultra-broadband high power and high dynamic range direct- conversion RF transmitters and high temperature III- nitride based gas sensors.