ZnS-Based Photonic Crystal Phosphors Fabricated Using Atomic Layer Deposition

摘要

The infiltration by atomic layer deposition of three-dimensional opal structures has been investigated as a means of fabricating photonic crystal phosphors. ZnS:Mn infiltrated and inverse opals have been demonstrated with filling fractions >95%. Characterization of these structures by scanning electron microscopy, specular reflectance, and photoluminescence is reported. Specular reflectance measurements confirm successful infiltration, and demonstrate modification of the electromagnetic density of states consistent with calculated photonic (111) pseudo band gaps. Photoluminescence measurements reveal modification of emission by the photonic crystal consistent with angular dependent specular reflectance measurements. These results reveal a flexible and convenient route for fabricating high performance photonic crystal structures and optical microcavities.