Research and Development of Silicon Carbide (SiC) Avalanche Sharpeners for Picosecond Range, High Power Switches

摘要

This report results from a contract tasking loffe Institute as follows: The Grantee will develop, fabricate, test, and characterize 4H-SiC power semiconductor switches operating in picosecond range of switch time. Special 4H-SiC multi-layered junction structures, such as diode structures (p+nn+-type) and triode structures (p+np+- and n+pn+-type) will be fabricated and tested as avalanche sharpeners.