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Avalanche-rugged silicon carbide (SiC) power device
Avalanche-rugged silicon carbide (SiC) power device
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机译:雪崩坚固的碳化硅(SiC)功率器件
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摘要
In at least one general aspect, a silicon carbide (SiC) device can include a drift region and a termination region at least partially surrounding the SiC device. The termination region can have a first transition zone and a second transition zone. The first transition zone can be disposed between a first zone and a second zone, and the second zone can have a top surface lower in depth than a depth of a top surface of the first zone. The first transition zone can have a recess, and the second transition zone can be disposed between the second zone and a third zone.
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