Room Temperature Devices of Dilute Magnetic Semiconductors

摘要

We report on the dependence of ferromagnetic properties of MOCVD grown GaMnN films on carrier transfer across adjacent layers. We found that the magnetic properties of GaMnN, as a part of GaMnN/GaN:Mg heterostructures depends on the thickness of both the GaMnN film and the adjacent GaN:Mg layer and on the presence of a wide bandgap barrier at this interface. These results are explained based on the occupancy of the Mn energy band and how the occupancy can be altered due to carrier transfer at the GaMnN/GaN:Mg interfaces.