Dielectric and Infrared Properties of TiO2 Films Containing Anatase and Rutile

摘要

Electrical and optical properties of low-temperature, plasma enhanced chemical vapour deposited films of Ti02 have been studied; the source gases were TiCl4 and O2. The amorphous, as-deposited films had a dielectric constant approximately 33 consistent with their measured density of 3.2 0.2 g cm - . Films deposited using a -41 V substrate bias contained the anatase phase and some rutile as evidenced from infrared spectroscopy and x-ray scattering. Annealing of these films at 600 C resulted in a significant increase in the rutile content of the film.