Negative Differential Resistance of InGaAs Dual Channel Transistors

摘要

We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In(0.53)Ga(0.47)As quantum well, a 2 nm In(0.52)Al(0.48)As barrier layer, and a low mobility 1 nm In(0.26)Ga(0.74)As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low source-drain voltage of 0.38 V. The NDR characteristics can be clearly seen in the temperature range of 50 to 220 K with a gate voltage of 5 V. The NDR mechanism is thought to be the carrier transfer from the high mobility to the low mobility channels. Three-terminal VMTs are favorable for applications to high-frequency, high-speed, and low- power consumption devices.