Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

摘要

The electronic band structure of wurtzite semiconductor heterostructures was investigated theoretically using the envelope function formalism. I developed a Lagrangian approach for the valence bands so that the order of the derivatives appearing in the multiband picture is explicitly specified when Schrodinger's equations for the envelope functions are generated through the application of the principle of least action, via the finite element method. Boundary conditions at material interfaces were examined in detail. The theoretical results were obtained for arbitrary growth directions and the spin-orbit interaction and inversion asymmetry effects were taken into account. This is of interest for A-plane wurtzite heterostructures of ZnO/MgZnO and GaN/AlGaN systems grown on R-plane sapphire. The FEm approach gives wavefunctions and allows device modeling. Calculations for quantum wells and superlattices are presented. Results for magnetization in DMS No-doped structures were also developed.