Structural and Electrical-Optical Characterizations of Semiconductor- Atomic Superlattice

摘要

The following work was accomplished under this funding: (A) Semiconductor-Atomic Superlattice (SAS) consisting of Si-Si/O/Si-Si as a period. By repeating, a superlattice, SL is formed. Oxygen is introduced by gas adsorption, resembling mono-oxide rather than SiO2 which cannot be epitaxial. This epi-system has a theoretical strain approximately 6%, which is not prohibitive. This SAS shows PL and EL approximately 2.3eV. Reverse current in I-V is reduced more than 2 orders of magnitude, may be used as an epitaxial gate for possible 3D ICs. (B) By defining a wave impedance or wave conductance the ratio of Poyting vector to energy stored, similar to the definition of photons, for electron, G = ge(carot)2/h, commonly known as fundamental conductance, where g = 1,2,3... More remarkably, in 3D, we found that g is a tensor consisting of integers as well as fractions. (C) We consider N electrons confined inside a dielectric sphere, by minimizing the total interaction energy due to electron-electron term, polarization terms as well as self polarization term, we found that the E/N interaction energy per electron versus N consists of features identical to the periodic table of elements, while using Poisson equation instead of Schrodinger equation. More remarkably is the fact that Pauli's exclusion principle was never imposed.