Growth and Characterization Studies of InGaN for Optoelectronics, Electronics and Photovoltaic Applications.

摘要

In the past few years, we have been performing the research on the growth and characterization of InGaN/GaN nanostructures. Based on those nanostructures, we fabricated efficient dual-color and white-light light- emitting diodes. Meanwhile, we studied the coupling between surface plasmon and InGaN/GaN quantum wells for enhancing the emission efficiency. The detailed research topics are shown as follows: (1) Prestrain growth of InGaN/GaN quantum wells for increasing indium incorporation; (2) Fs pump-probe study on ultrafast carrier dynamics in InGaN of nanostructures; (3) Simulation study on carrier capture by Nano-clusters in InGaN; (4) Surface plasmon coupling with InGaN/GaN quantum wells for light emission manipulation; (5) Fabrications of blue/green dual-color and white light-emitting diodes; (6) Optical and material characterization of ZnO nanostructures; (7) Fabrication of anodized-aluminum- oxide 'AAO' (question mark) preparing for patterned InGaN/GaN nano-column growth Also, in cooperating with the scientists at AFRL, we performed the following studies a. Characterization of GaN nano-columns b. GaN over-growth on GaN nano-columns.