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Linking Computational and Experimental Studies of lll-V Quantum Dots for Optoelectronics and Photovoltaics

机译:链接用于光电和光伏的llV量子点的计算和实验研究

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摘要

Low-dimensional semiconductors (LDS) are semiconductor structures such as quantum dots, quantum wires, and quantum wells in which electron and hole wave functions are confined due to heterogeneous composition and often strongly affected by mismatch strain. Due to the quantum confinement, LDS exhibit unusual electronic and optical properties not found in bulk semiconductor materials. Quantum dots (QD) have found new applications in various semiconductor devices such as lasers, photodetectors, and solar cells. Precise design of QD structures requires understanding of their chemical composition and nanomechanical properties, and relies on both experimental and computational approaches. In this paper we provide an overview of computational and experimental methods for characterization of QD hetero-structures. In particular, we review our own concerted efforts to bring together computation and experiment in order to better explain their optoelectronic and photovoltaic properties.
机译:低维半导体(LDS)是诸如量子点,量子线和量子阱之类的半导体结构,其中电子和空穴波功能由于异质成分而受到限制,并且经常受到失配应变的强烈影响。由于量子限制,LDS表现出在大块半导体材料中未发现的异常的电子和光学特性。量子点(QD)已在各种半导体器件(例如激光器,光电探测器和太阳能电池)中找到了新的应用。精确设计QD结构需要了解其化学成分和纳米机械性能,并依赖于实验和计算方法。在本文中,我们概述了表征QD异质结构的计算和实验方法。特别是,我们回顾了自己的共同努力,将计算和实验结合在一起,以便更好地解释其光电和光伏特性。

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