首页> 美国政府科技报告 >Estimating the Strength of Single-Ended Dislocation Sources in Micron- Sized Single Crystals (Postprint)
【24h】

Estimating the Strength of Single-Ended Dislocation Sources in Micron- Sized Single Crystals (Postprint)

机译:估算微米级单晶中单端位错源的强度(后印刷)

获取原文

摘要

Three-dimensional (3D) discrete dislocation dynamics simulations were used to calculate the effects of anisotropy of dislocation line tension (increasing Poisson's volumes with free surfaces) and to compare them with the strength of double-ended sources of equal length. Their plastic response was directly modeled within a 1um3 volume composed of a single crystal fcc metal. In general, double-ended sources are stronger than single-ended sources of an equal length and exhibit no significant effects from truncating the long-range elastic fields at this scale. The double-ended source strength increases with v, exhibiting an increase of about 50% at v=0.38 (value of Ni) as compared to the value at v=0. Independent of dislocation line direction, for v greater than 0.20, the strengths of single-ended sources depended upon the sense of the stress applied.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号