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Theoretical Justification of Single-Ended Dislocation-Source-Controlled Deformation of Micropillar fcc Crystals

机译:单端脱位源控制微米FCC晶体的理论辩护

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摘要

It was established at the beginning of the 21st century that the critical resolved shear stress of small-sized (diameter from 50 nm to 10 mu m) metallic crystals fabricated from bulk crystals increases drastically with decreasing specimen diameter. Dou and Derby [Scr. Mater. 61, 524 (2009)] showed that, the critical shear stresses of small-sized single crystals of various fcc metals obeyed a universal power law of specimen size with an exponent of -0.66. In this study, we succeeded in reproducing almost perfectly the above universal relation without any adjustable parameters, based on a deformation process controlled by the operation of single-ended dislocation sources.
机译:它是在21世纪初建立的,即由散装晶体制造的小尺寸(直径从50nm至10μm)金属晶体的临界分离的剪切应力随着样品直径的降低而增加。 Dou和Derby【SCR。母娘。如图61,524(2009)所示,各种FCC金属的小型单晶的临界剪切应力遵守了标本尺寸的普遍动力法,其指数为-0.66。在这项研究中,我们基于由单端位错源的操作控制的变形过程,在没有任何可调参数的情况下,我们成功地完美地再现了上述普遍关系。

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  • 来源
    《Physical review letters》 |2021年第15期|155501.1-155501.5|共5页
  • 作者单位

    Tokyo Univ Sci Shinjuku Ku Tokyo 1628601 Japan;

    Univ Tokyo Inst Ind Sci Meguro Ku Tokyo 1538505 Japan;

    Univ Tokyo Inst Ind Sci Meguro Ku Tokyo 1538505 Japan;

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