Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax > 650GHz for 340GHz Transmitter

摘要

The proposed program goals are the development of transistor technology for the sub-millimeter wave (i.e 340GHz) source to be used in a wide range of military and consumer applications using transistors operating toward THz bandwidths. The transistors will be designed, developed and fabricated using a novel material structure employing a type H double heterojonction bipolar transistor (type II DHBT). This structure has a world-record high-speed operation (ft >500 GHz) with higher breakdown voltage and lower junction temperatures than any other competing technology, including lattice matched type I InP/InGaAs I SHBTs, type I DHBTs, and pseodomorphic high-electron mobility transistors (pHEMTs). We propose to accomplish these using Antimonide- based DHBTs for all active components of the power amplifier. This project will be broken up into three stages consisting of a transistor development and fabrication stage, a model development stage, and a power amplifier design stage. In the transistor development and fabrication stage the speed of Sb- DHBTs will be increased to reach the goal of 650/400 GHz (fMAX/fT). Device models (Agilent ADS and UTUC's own SDD2) will be refined to accurately represent the devices high frequency characteristics and enable the design of the power amplifier's components. Finally a power amplifier operating at 340GHz will be designed and simulated to assess power gain, maximum Output power, and power added efficiency.