A submicron InGaAs/InP double heterojunction bipolar transistor with ft and fmax of 280GHz

摘要

A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm~2 exhibits a current cutoff frequency ft and a maximum oscillation frequency fmax both of 280GHz. The breakdown voltage is more than 4V. The high speed InGaAs/InP DHBT with comparable high breakdown voltage is promising for voltage controlled oscillator (VCO) and mixer applications at W band or even higher frequencies.