1.5 Micron Photonic Devices Based on III-nitrides Grown on Si Substrates.

摘要

Report developed under topic No. A10AT015, contract W911NF-10-C-0073. Our goal is to provide the technology base for realizing monolithic emitters and optical amplifiers active at 1.5 micron on Si substrates that are compatible with standard processes of the complementary metal-oxide- semiconductor (CMOS) technology. Our approach is to exploit epitaxial growth of III-nitride semiconductors on Si substrate and in-situ erbium (Er) doping of III-nitrides. During the Phase I supporting period, 3N has demonstrated proof- of-concept of a technology for growth of Er doped III-nitride photonic device structures on (001) Si substrates. More specifically, InGaN:Er and GaN:Er films and p-i-n junction (p-GaN/InGaN/n-GaN:Er) devices operating at 1.54 um wavelength have been designed, fabricated and characterized. Our Phase I results have demonstrated the feasibility to develop active photonic devices operating at wavelength around 1.54 um on silicon wafers that are CMOS compatible.