INTERIM DEVELOPMENT REPORT FOR HIGH SPEED POWER AMPLIFIER USING ELECTRON BEAM SWITCHED P-N JUNCTIONS

摘要

Electron beam multiplier (EBM) tubes have been further developed to give a 10 ampere positive pulse at 300 volts for a bare junction silicon diode with heat sink. The beam current was in the order of 2 ma. at 20 KV. The current gain was thus 5,000. This was confirmed also by D.C. measurements at' low current. The grid pulse was 1 microsecond in duration at 100 pps. These improvements were achieved mainly by modifications in processing to greatly reduce contamination of the diode.nElectron gun development has given a 4.0 ma beam current at zero bias and a cut-off of -40 volts.. Modifications of electron gun design are in progress to reduce the grid cut-off voltage by a factor of two.nThe heat sink for the diode has been improved with a ceramic, lead-in insulator to eliminate gas leakage trouble.