High switching speed P-N junction devices with recombination means centrally located in high resistivity layer

摘要

A semiconductor device for operation at high switching speeds includes a region of reduced carrier lifetime situated in the portion of the device in which the peak amount of carrier recombination occurs during device turn-off. This region of reduced carrier lifetime causes fast carrier recombination during device turn-off such that device switching speed is correspondingly increased over that of comparable conventional devices.