The research reported herein has been concerned with investigations involving gallium antimonide, and to a lesser extent, with certain properties óf indium.antimonide.nIn principle, GaSb crystals are not difficult to prepare inasmuch as the melting point of the compound is around 700℃, and the vapor pressures of the elements at this temperature are not excessive. The problem is to achieve sufficiently low carrier concentrations to permit adequate assessment of the material's intrinsic properties or to enable exploitation of some of the unique characteristics.
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